2N7000 Small Signal Mosfet N-Channel Transistor
Packages Available: TO-92
MAXIMUM RATINGS
| Rating | Symbol | Value | Unit |
| Drain Source Voltage | VDSS | 60 | Vdc |
| Drain−Gate Voltage (RGS = 1.0 M) | VDGR | 60 | Vdc |
| Gate−Source Voltage − Continuous − Non−repetitive (tp ≤ 50 s) |
VGS VGSM |
±20 ±40 |
Vdc Vpk |
| Drain Current − Continuous − Pulsed |
ID IDM |
200 500 |
mAdc |
| Total Power Dissipation @ TC = 25°C Derate above 25°C |
PD | 350 2.8 |
mW mW/°C |
| Operating and Storage Temperature Range |
TJ, Tstg | −55 to +150 | °C |
THERMAL CHARACTERISTICS
| Characteristic | Symbol | Max | Unit |
| Thermal Resistance, Junction−to−Ambient | RJA | 357 | °C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/16″ from case for 10 seconds |
TL | 300 | °C |
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.